DCP
Dry Chemical Planarization (DCP) is our advanced flattening system. DCP enables non-contact, zero distortion processing by vapor phase chemical etching reaction of plasma. This system is specially developed to eliminate wafer damage from charge-up by applying downstream plasma. This clean and dry process also ameliorates production environments. Applications include high end semiconductor-related requirements for the next generation flatness specifications.
DCP
Controlling down stream plasma is a dry etch method to achieve super exact tolerances without surface damage on silicon wafers and SOI layers which cannot be achieved by any conventional polishing process method.
