DCP

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DCP

Dry Chemical Planarization (DCP) is our numerically controlled flattening system. DCP enables non-contact, zero distortion processing by vapor phase chemical etching reaction of plasma. This system was specially developed to eliminate wafer damage from charge-up by applying downstream plasma. DCP is extremely precise and utilizes an optimized original numerically controlled program to realize the most stabile processing. Applications include high end semiconductor-related requirements for the next generation flatness specifications. DCP can easily process large diameter parts in excess of 300mm. This clean and dry process also ameliorates production environments.


DCP
DCP

Controlling down stream plasma is a dry etch method to achieve super exact tolerances without surface damage on silicon wafers, SOI layers, and photomasks which cannot be achieved by any conventional polishing process method.

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